Online Quiz – Semiconductor Electronics

Class 12 Physics | NCERT Based | EDU Bright Pages

Chapter:
Semiconductor Electronics
Questions:
20 MCQs
Level:
Board + Competitive
Time:
10 Minutes

Q1. Barrier potential of a silicon p–n junction at room temperature is:

Q2. Depletion region in a p–n junction is formed due to:

Q3. Direction of electric field in depletion region is:

Q4. Increase in doping concentration causes depletion width to:

Q5. A semiconductor diode is a:

Q6. Reverse saturation current in a diode is due to:

Q7. Threshold voltage of germanium diode is approximately:

Q8. Breakdown in a diode occurs due to:

Q9. Efficiency of half-wave rectifier is nearly:

Q10. Output frequency of half-wave rectifier is:

Q11. Full-wave rectifier converts:

Q12. Number of diodes in bridge rectifier is:

Q13. Efficiency of full-wave rectifier is about:

Q14. Ripple factor of full-wave rectifier is:

Q15. In intrinsic semiconductor, electrons and holes are:

Q16. Doping is the process of:

Q17. Majority carriers in n-type semiconductor are:

Q18. Trivalent impurity produces:

Q19. Minority carriers in p-type semiconductor are:

Q20. Conductivity of semiconductor increases with temperature because: